RESEARCH
1. Mechanism of Electrical Switching in Next-Generation Non-Volatile Memory Devices: Novel Materials and switching reliability.
· Used a novel amorphous oxide deposition for ReRAM focusing on green and inexpensive materials for semiconductor industry from post-doc Han.
· Devised a method for reducing the threshold voltage drift maintaining a constant resistance window.
· Reduced the forming voltage of devices.
· Fabricated and tested dot and crossbar architecture of ReRAM.
· Analysis of multi-level capability in devices.
· Analysis of conduction in insulators and Conduction Mechanism Modeling of MIM structures.
2. Conductivity measurement
· Novel conductivity measurement of ZnO nanowires using Impedance Spectroscopy.
· Design and simulation of equivalent circuit for nanowires in solution.
· Used an unique synthesis of ZnO nanowires from post-doc Huang.
· Percolation analysis of ZnO nanowires in different solutions to determine conductivity.
3. Dielectrophoresis
· Alignment yield was investigated as a function of electrode spacing, Dielectrophoretic voltage, Dielectrophoretic frequency, Isopropyl Alcohol flow rate, and Nanowire length.
· Zinc Oxide Nanowire Top contact FET.